Invention Grant
- Patent Title: Over-current protection device
- Patent Title (中): 过电流保护装置
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Application No.: US12662550Application Date: 2010-04-22
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Publication No.: US08198975B2Publication Date: 2012-06-12
- Inventor: Yi An Sha , Kuo Chang Lo , Chin Piao Yang
- Applicant: Yi An Sha , Kuo Chang Lo , Chin Piao Yang
- Applicant Address: TW Hsinchu
- Assignee: Polytronics Technology Corporation
- Current Assignee: Polytronics Technology Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Stites & Harbison, PLLC
- Agent Juan Carlos A. Marquez, Esq
- Priority: TW99109813A 20100331
- Main IPC: H01C7/10
- IPC: H01C7/10

Abstract:
An over-current protection device comprises two metal foils, a positive temperature coefficient (PTC) material layer and a packaging material layer. The PTC material layer is sandwiched between the two metal foils and has a volume resistivity below 0.1 Ω-cm. The PTC material layer includes (i) plural crystalline polymers having at least one crystalline polymer with a melting point less than 115° C.; (ii) an electrically conductive nickel filler having a volume resistivity less than 500 μΩ-cm; and (iii) a non-conductive metal nitride filler. The electrically conductive nickel filler and non-conductive metal nitride filler are dispersed in the crystalline polymer. The packaging material layer which encapsulates the chip is essentially comprised of the PTC layer and the two metal foils. The packaging material layer is formed by reacting epoxy resin with a hardener having amide functional group.
Public/Granted literature
- US20110241818A1 Over-current protection device Public/Granted day:2011-10-06
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