发明授权
- 专利标题: Non-volatile memory with both single and multiple level cells
- 专利标题(中): 具有单级和多级单元的非易失性存储器
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申请号: US13186172申请日: 2011-07-19
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公开(公告)号: US08199572B2公开(公告)日: 2012-06-12
- 发明人: Seiichi Aritome
- 申请人: Seiichi Aritome
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Brooks, Cameron & Huebsch, PLLC
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
Memory arrays and methods of operating such memory arrays are described as having a memory cell operated as a single level cell interposed between and coupled to a select gate and a memory cell operated as a multiple level memory cell. In some embodiments, a memory array is described as including a number of select gates coupled in series to a number of memory cells operated as single level memory cells and a number of memory cells operated as multiple level memory cells, where a first select gate is directly coupled to a first memory cell operated as a single level memory cell interposed between and coupled to the first select gate and a continuous number of memory cells operated as multiple level memory cells.
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