发明授权
- 专利标题： LED having vertical structure and method for fabricating the same
- 专利标题（中）： 具有垂直结构的LED及其制造方法
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申请号： US12877652申请日： 2010-09-08
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公开(公告)号： US08202753B2公开(公告)日： 2012-06-19
- 发明人: Jong Wook Kim , Jae Wan Choi , Hyun Kyong Cho , Jong Ho Na , Jun Ho Jang
- 申请人： Jong Wook Kim , Jae Wan Choi , Hyun Kyong Cho , Jong Ho Na , Jun Ho Jang
- 申请人地址： KR Seoul
- 专利权人： LG Electronics Inc.
- 当前专利权人： LG Electronics Inc.
- 当前专利权人地址： KR Seoul
- 代理机构： McKenna Long & Aldridge LLP
- 优先权： KR10-2005-0123857 20051215; KR10-2006-0063586 20060706
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layers, and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer.
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