发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12012849申请日： 2008-02-05
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公开(公告)号： US08202790B2公开(公告)日： 2012-06-19
- 发明人: Yukihiro Utsuno
- 申请人： Yukihiro Utsuno
- 申请人地址： US CA Sunnyvale
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 当前专利权人地址： US CA Sunnyvale
- 优先权： JP2007-025335 20070205
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/425
摘要：
A semiconductor device in accordance with one embodiment of the invention can include a semiconductor substrate having a groove, a bit line, a pocket implantation region, a bottom insulating membrane, and a charge accumulation region. The bit line is formed on a side of the groove in the semiconductor substrate and acts as a source and a drain. The pocket implantation region is formed to touch (or contact) the bit line, has a similar conductivity type as the semiconductor substrate, and has a dopant concentration higher than that of the semiconductor substrate. The bottom insulating membrane is formed on and touches (or contacts) a side surface of the groove. The charge accumulation layer is formed on and touches (or contacts) a side surface of the bottom insulating membrane.
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