发明授权
US08202806B2 Method to avoid threshold voltage shift in thicker dielectric films
失效
避免较厚介质膜中阈值电压漂移的方法
- 专利标题： Method to avoid threshold voltage shift in thicker dielectric films
- 专利标题（中）： 避免较厚介质膜中阈值电压漂移的方法
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申请号： US11242375申请日： 2005-10-03
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公开(公告)号： US08202806B2公开(公告)日： 2012-06-19
- 发明人: Randhir P.S. Thakur , Ravi Iyer , Howard Rhodes
- 申请人： Randhir P.S. Thakur , Ravi Iyer , Howard Rhodes
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Schwegman, Lundberg & Woessner, P.A.
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
A method of fabricating an integrated circuit having reduced threshold voltage shift is provided. A nonconducting region is formed on the semiconductor substrate and active regions are formed on the semiconductor substrate. The active regions are separated by the nonconducting region. A barrier layer and a dielectric layer are deposited over the nonconducting region and over the active regions. Heat is applied to the integrated circuit causing the barrier layer to anneal.
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