发明授权
- 专利标题： Defective graphene-based memristor
- 专利标题（中）： 缺陷石墨烯忆阻器
-
申请号： US12754300申请日： 2010-04-05
-
公开(公告)号： US08203171B2公开(公告)日： 2012-06-19
- 发明人: Joshua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
- 申请人： Joshua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： H01L29/74
- IPC分类号： H01L29/74
摘要：
A graphene-based memristor includes a first electrode, a defective graphene layer adjacent the first electrode, a memristive material that includes a number of ions adjacent the defective graphene layer, a second electrode adjacent the memristive material, and a voltage source that generates an electric field between the first and the second electrodes. Under the influence of the electric field, ions in the memristive material form an ion conducting channel between the second electrode and the defective graphene layer.
公开/授权文献
- US20110240947A1 Defective Graphene-Based Memristor 公开/授权日：2011-10-06
信息查询
IPC分类:
