发明授权
US08203210B2 Semiconductor device having metal contacts formed in an interlayer dielectric film comprising four silicon-containing layers
失效
具有形成在包含四个含硅层的层间电介质膜中的金属触点的半导体器件
- 专利标题： Semiconductor device having metal contacts formed in an interlayer dielectric film comprising four silicon-containing layers
- 专利标题（中）： 具有形成在包含四个含硅层的层间电介质膜中的金属触点的半导体器件
-
申请号： US12883031申请日： 2010-09-15
-
公开(公告)号： US08203210B2公开(公告)日： 2012-06-19
- 发明人: Takeshi Furusawa , Takao Kamoshima , Masatsugu Amishiro , Naohito Suzumura , Shoichi Fukui , Masakazu Okada
- 申请人： Takeshi Furusawa , Takao Kamoshima , Masatsugu Amishiro , Naohito Suzumura , Shoichi Fukui , Masakazu Okada
- 申请人地址： JP Kawasaki-shi
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2007-074266 20070322
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs are formed and over the main surface, insulating films 10, 11 are formed. In the insulating films 10, 11 a contact hole is formed and a plug is embedded therein. Over the insulating film 11 in which the plug is embedded, insulating films 14, 15, 16 are formed and an opening is formed in the insulating films 14, 15, 16 and a wire is embedded therein. The insulating film 15 is an etching stopper film when etching the insulating film 16 in order to form the opening, containing silicon and carbon. The insulating film 11 has a high hygroscopicity and the insulating film 15 has a low moisture resistance, however, by interposing the insulating film 14 therebetween and making the insulating film 14 have a higher density of the number of Si (silicon) atoms than that of the insulating film 11, an electrically weak interface is prevented from being formed.
公开/授权文献
信息查询
IPC分类:
