发明授权
- 专利标题: Nonvolatile memory devices having a three dimensional structure
- 专利标题(中): 具有三维结构的非易失性存储器件
-
申请号: US12798525申请日: 2010-04-06
-
公开(公告)号: US08203211B2公开(公告)日: 2012-06-19
- 发明人: Jaehun Jeong , Hansoo Kim , Jaehoon Jang , Hoosung Cho , Kyoung-Hoon Kim
- 申请人: Jaehun Jeong , Hansoo Kim , Jaehoon Jang , Hoosung Cho , Kyoung-Hoon Kim
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Onello & Mello, LLP
- 优先权: KR10-2009-0031368 20090410
- 主分类号: H01L27/115
- IPC分类号: H01L27/115 ; H01L23/522
摘要:
Provided is a nonvolatile memory device having a three dimensional structure. The nonvolatile memory device may include cell arrays having a plurality of conductive patterns having a line shape three dimensionally arranged on a semiconductor substrate, the cell arrays being separated from one another; semiconductor patterns extending from the semiconductor substrate to cross sidewalls of the conductive patterns; common source regions provided in the semiconductor substrate under a lower portion of the semiconductor patterns in a direction in which the conductive patterns extend; a first impurity region provided in the semiconductor substrate so that the first impurity region extends in a direction crossing the conductive patterns to electrically connect the common source regions; and a first contact hole exposing a portion of the first impurity region between the separated cell arrays.
公开/授权文献
- US20100258947A1 Nonvolatile memory devices 公开/授权日:2010-10-14