发明授权
- 专利标题: Semiconductor device and method for driving the same
- 专利标题(中): 半导体装置及其驱动方法
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申请号: US12445390申请日: 2007-11-20
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公开(公告)号: US08203376B2公开(公告)日: 2012-06-19
- 发明人: Tatsuo Morita , Manabu Yanagihara , Hidetoshi Ishida , Yasuhiro Uemoto , Hiroaki Ueno , Tsuyoshi Tanaka , Daisuke Ueda
- 申请人: Tatsuo Morita , Manabu Yanagihara , Hidetoshi Ishida , Yasuhiro Uemoto , Hiroaki Ueno , Tsuyoshi Tanaka , Daisuke Ueda
- 申请人地址: JP Osaka
- 专利权人: Panasonic Corporation
- 当前专利权人: Panasonic Corporation
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2006-312502 20061120; JP2006-334094 20061212; JP2007-153031 20070608
- 国际申请: PCT/JP2007/072476 WO 20071120
- 国际公布: WO2008/062800 WO 20080529
- 主分类号: H03K17/687
- IPC分类号: H03K17/687
摘要:
A semiconductor device includes a semiconductor layer stack 13 formed on a substrate 11 and having a channel region, a first electrode 16A and a second electrode 16B formed spaced apart from each other on the semiconductor layer stack 13, a first gate electrode 18A formed between the first electrode 16A and the second electrode 16B, and a second gate electrode 18B formed between the first gate electrode 18A and the second electrode 16B. A first control layer 19A having a p-type conductivity is formed between the semiconductor layer stack 13 and the first gate electrode 18A.
公开/授权文献
- US20100097105A1 SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME 公开/授权日:2010-04-22