Invention Grant
- Patent Title: Method for resetting time-based CMOS image sensor
- Patent Title (中): CMOS时间图像传感器复位方法
-
Application No.: US12314215Application Date: 2008-12-05
-
Publication No.: US08203639B2Publication Date: 2012-06-19
- Inventor: Gunhee Han , Dongmyung Lee , Kunhee Cho
- Applicant: Gunhee Han , Dongmyung Lee , Kunhee Cho
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0129809 20071213
- Main IPC: H04N5/335
- IPC: H04N5/335

Abstract:
A method of resetting a time-based CMOS image sensor may be provided, where the time-based CMOS image sensor may include a photodiode, a transfer transistor transferring photo-generated charges generated in the photodiode to a floating diffusion node and having a gate to which a ramp signal is input, and a reset transistor resetting the photodiode and the floating diffusion node. The method may include generating photo-generated charges at the photodiode, transferring the photo-generated charges to the floating diffusion node in response to a ramp signal; and resetting a reset electron potential of the photodiode to be higher than a reset electron potential of the floating diffusion node.
Public/Granted literature
- US20090153714A1 Method for resetting time-based CMOS image sensor Public/Granted day:2009-06-18
Information query