发明授权
- 专利标题: Vertical channel thin-film transistor and method of manufacturing the same
- 专利标题(中): 垂直通道薄膜晶体管及其制造方法
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申请号: US12571345申请日: 2009-09-30
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公开(公告)号: US08203662B2公开(公告)日: 2012-06-19
- 发明人: Hoon Kang , Yun-Seok Lee , Jae-Sung Kim , Yang-Ho Jung , Young-Je Cho , Cheon-Jae Maeng , Woo-Geun Lee
- 申请人: Hoon Kang , Yun-Seok Lee , Jae-Sung Kim , Yang-Ho Jung , Young-Je Cho , Cheon-Jae Maeng , Woo-Geun Lee
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Innovation Counsel LLP
- 优先权: KR10-2008-0122039 20081203
- 主分类号: G02F1/136
- IPC分类号: G02F1/136 ; H01L29/04 ; H01L29/10 ; H01L31/00 ; H01L27/14 ; H01L29/15 ; H01L31/036
摘要:
Provided is a thin-film transistor (TFT) substrate. The TFT substrate includes: an insulating substrate; a semiconductor pattern which is formed on the insulating substrate, the semiconductor pattern having a top surface and a bottom surface; a source electrode and a drain electrode which are disposed on the top and bottom surfaces of the semiconductor pattern, respectively; a gate electrode which is disposed alongside the semiconductor pattern with a gate insulating film interposed therebetween; a data line which is connected to the source electrode and extends in a first direction; a gate line which is connected to the gate electrode and extends in a second direction; and a pixel electrode which is connected to the drain electrode and is formed in a pixel region.