Invention Grant
US08203863B2 Nonvolatile memory cells and nonvolatile memory devices including the same
有权
非易失性存储器单元和包括其的非易失性存储器件
- Patent Title: Nonvolatile memory cells and nonvolatile memory devices including the same
- Patent Title (中): 非易失性存储器单元和包括其的非易失性存储器件
-
Application No.: US12801533Application Date: 2010-06-14
-
Publication No.: US08203863B2Publication Date: 2012-06-19
- Inventor: Ho-jung Kim , In-kyeong Yoo , Jai-kwang Shin , Chang-jung Kim , Myoung-jae Lee , Ki-ha Hong
- Applicant: Ho-jung Kim , In-kyeong Yoo , Jai-kwang Shin , Chang-jung Kim , Myoung-jae Lee , Ki-ha Hong
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2009-0118454 20091202
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C8/00
Abstract:
A nonvolatile memory cell may include a bidirectional switch having a first threshold voltage when a forward current is applied to the bidirectional switch and a second threshold voltage when a reverse current is applied to the bidirectional switch; and a variable resistor connected to the bidirectional switch in series. A state of resistance of the variable resistor may be controlled according to voltage applied to the variable resistor. A sum of a magnitude of the first threshold voltage and a magnitude of the second threshold voltage may be greater than a write voltage that is used to perform a write operation on the variable resistor.
Public/Granted literature
- US20110128772A1 Nonvolatile memory cells and nonvolatile memory devices including the same Public/Granted day:2011-06-02
Information query
