Invention Grant
US08203863B2 Nonvolatile memory cells and nonvolatile memory devices including the same 有权
非易失性存储器单元和包括其的非易失性存储器件

Nonvolatile memory cells and nonvolatile memory devices including the same
Abstract:
A nonvolatile memory cell may include a bidirectional switch having a first threshold voltage when a forward current is applied to the bidirectional switch and a second threshold voltage when a reverse current is applied to the bidirectional switch; and a variable resistor connected to the bidirectional switch in series. A state of resistance of the variable resistor may be controlled according to voltage applied to the variable resistor. A sum of a magnitude of the first threshold voltage and a magnitude of the second threshold voltage may be greater than a write voltage that is used to perform a write operation on the variable resistor.
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