The non-volatile memory device includes a plurality of memory cells. Each of the memory cells is configured to achieve one of a plurality of states, and each of the states represents different multi-bit data. In one embodiment, the method of programming includes simultaneously programming (1) a first memory cell from a first selected state to a second selected state and (2) a second memory cell from a third selected state to a refined third selected state. The refined third selected state has a higher verify voltage than the third selected state.