发明授权
- 专利标题: Supporting membranes on nanometer-scale self-assembled films
- 专利标题(中): 在纳米级自组装膜上支撑膜
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申请号: US12641782申请日: 2009-12-18
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公开(公告)号: US08206601B2公开(公告)日: 2012-06-26
- 发明人: Joan K. Bosworth , Elizabeth A. Dobisz , Ricardo Ruiz , Franck D. Rose dit Rose
- 申请人: Joan K. Bosworth , Elizabeth A. Dobisz , Ricardo Ruiz , Franck D. Rose dit Rose
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址: NL Amsterdam
- 代理机构: Zilka-Kotab, PC
- 主分类号: B44C1/22
- IPC分类号: B44C1/22
摘要:
Block copolymer lithography has emerged as an alternative lithographic method to achieve large-area, high-density patterns at resolutions near or beyond the limit of conventional lithographic techniques for the formation of bit patterned media and discrete track media. In one embodiment, a structure comprises a plurality of nanostructures extending upwardly from a substrate and a porous membrane extending across upper ends of the plurality of nanostructures. A method, according to another embodiment, comprises forming a block copolymer layer on a substrate, inducing self assembly of the block copolymer layer, selectively degrading a block polymer from the block copolymer layer, forming a porous membrane over the block copolymer layer, and removing a portion of the block copolymer layer for defining a plurality of nanostructures extending upwardly from the substrate after forming the porous membrane over the block copolymer layer. Other systems and methods are disclosed as well.
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