发明授权
US08206603B2 Methods of etching nanodots, methods of fabricating integrated circuit devices and device structures, methods of etching a layer comprising a late transition metal, and methods of forming a plurality of transistor gate constructions
有权
蚀刻纳米点的方法，制造集成电路器件和器件结构的方法，蚀刻包括后期过渡金属的层的方法以及形成多个晶体管栅极结构的方法
- 专利标题： Methods of etching nanodots, methods of fabricating integrated circuit devices and device structures, methods of etching a layer comprising a late transition metal, and methods of forming a plurality of transistor gate constructions
- 专利标题（中）： 蚀刻纳米点的方法，制造集成电路器件和器件结构的方法，蚀刻包括后期过渡金属的层的方法以及形成多个晶体管栅极结构的方法
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申请号： US13189798申请日： 2011-07-25
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公开(公告)号： US08206603B2公开(公告)日： 2012-06-26
- 发明人: Eugene P. Marsh
- 申请人： Eugene P. Marsh
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John, P.S.
- 主分类号： B44C1/22
- IPC分类号： B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00
摘要：
Embodiments of the invention include methods of etching nanodots, to methods of removing nanodots from substrates, and to methods of fabricating integrated circuit devices. In one embodiment, a method of etching nanodots that include a late transition metal includes exposing such nanodots to a gas comprising a phosphorus and halogen-containing compound and an oxidizing agent. After the exposing, the nanodots which are remaining and were exposed are etched (either partially or completely) with an aqueous solution comprising HF.
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