发明授权
US08207040B2 Methods of manufacturing semiconductor devices including forming (111) facets in silicon capping layers on source/drain regions
有权
制造半导体器件的方法包括在源/漏区上的硅封装层中形成（111）刻面
- 专利标题： Methods of manufacturing semiconductor devices including forming (111) facets in silicon capping layers on source/drain regions
- 专利标题（中）： 制造半导体器件的方法包括在源/漏区上的硅封装层中形成（111）刻面
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申请号： US13021029申请日： 2011-02-04
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公开(公告)号： US08207040B2公开(公告)日： 2012-06-26
- 发明人: Hoi-Sung Chung , Dong-Suk Shin , Dong-Hyuk Kim , Jung-Shik Heo , Myung-Sun Kim
- 申请人： Hoi-Sung Chung , Dong-Suk Shin , Dong-Hyuk Kim , Jung-Shik Heo , Myung-Sun Kim
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR10-2010-0013123 20100212
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/336 ; H01L21/36 ; H01L21/425
摘要：
A method of manufacturing a semiconductor device includes forming a gate electrode on a semiconductor substrate and a sidewall spacer on the gate electrode. Then, a portion of the semiconductor substrate at both sides of the sidewall spacer is partially etched to form a trench. A SiGe mixed crystal layer is formed in the trench. A silicon layer is formed on the SiGe mixed crystal layer. A portion of the silicon layer is partially etched using an etching solution having different etching rates in accordance with a crystal direction of a face of the silicon layer to form a capping layer including a silicon facet having an (111) inclined face.
公开/授权文献
- US20110201166A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 公开/授权日：2011-08-18
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