发明授权
- 专利标题: Electronic device, semiconductor device and manufacturing method thereof
- 专利标题(中): 电子器件,半导体器件及其制造方法
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申请号: US12327876申请日: 2008-12-04
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公开(公告)号: US08207533B2公开(公告)日: 2012-06-26
- 发明人: Shinji Maekawa , Hideaki Kuwabara
- 申请人: Shinji Maekawa , Hideaki Kuwabara
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权: JP2005-027312 20050203
- 主分类号: H01L29/04
- IPC分类号: H01L29/04
摘要:
The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging. One feature of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-like semiconductor layer and overlap it.
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