发明授权
US08207579B2 Semiconductor device having double diffused MOS transistors with varied on/off threshold voltages, and method of manufacturing the same
有权
具有具有变化的导通/截止阈值电压的双扩散MOS晶体管的半导体器件及其制造方法
- 专利标题： Semiconductor device having double diffused MOS transistors with varied on/off threshold voltages, and method of manufacturing the same
- 专利标题（中）： 具有具有变化的导通/截止阈值电压的双扩散MOS晶体管的半导体器件及其制造方法
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申请号： US12656137申请日： 2010-01-19
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公开(公告)号： US08207579B2公开(公告)日： 2012-06-26
- 发明人: Shinobu Takehiro
- 申请人： Shinobu Takehiro
- 申请人地址： JP Tokyo
- 专利权人： Lapis Semiconductor Co., Ltd.
- 当前专利权人： Lapis Semiconductor Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Rabin & Berdo, P.C.
- 优先权： JP2009-008687 20090119
- 主分类号： H01L27/01
- IPC分类号： H01L27/01
摘要：
A semiconductor device where a plurality of DMOS transistors formed in a distributed manner on a semiconductor substrate can operate without being destroyed and a method of manufacturing the same. The on/off threshold voltage of a DMOS transistor at the innermost position from among three or more DMOS transistors formed in a distributed manner on a semiconductor is greater than the on/off threshold voltage of a DMOS transistor at the outermost position.
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