Invention Grant
- Patent Title: Immersion lithography system using a sealed wafer bath
- Patent Title (中): 浸没光刻系统使用密封晶圆槽
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Application No.: US11670860Application Date: 2007-02-02
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Publication No.: US08208116B2Publication Date: 2012-06-26
- Inventor: Burn Jeng Lin , Ching-Yu Chang
- Applicant: Burn Jeng Lin , Ching-Yu Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03B27/52
- IPC: G03B27/52

Abstract:
Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus including a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly and comprising a seal ring for sealing a gap between a bottom edge of a wafer retained on the wafer stage and the wafer stage. The apparatus further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid; a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank; and at least one directional flow control fluid inlet surrounding the imaging lens for directing immersion fluid toward an edge of the wafer retained on the wafer stage closest to the imaging lens.
Public/Granted literature
- US20080106710A1 Immersion Lithography System Using A Sealed Wafer Bath Public/Granted day:2008-05-08
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