发明授权
US08208291B2 System and method to control a direction of a current applied to a magnetic tunnel junction
有权
控制施加到磁性隧道结的电流的方向的系统和方法
- 专利标题： System and method to control a direction of a current applied to a magnetic tunnel junction
- 专利标题（中）： 控制施加到磁性隧道结的电流的方向的系统和方法
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申请号： US12687310申请日： 2010-01-14
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公开(公告)号： US08208291B2公开(公告)日： 2012-06-26
- 发明人: Jung Pill Kim , Hari M. Rao , Kangho Lee
- 申请人： Jung Pill Kim , Hari M. Rao , Kangho Lee
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 代理商 Sam Talpalatsky; Nicholas J. Pauley; Jonathan T. Velasco
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A system and method to control a direction of a current applied to a magnetic tunnel junction is disclosed. In a particular embodiment, an apparatus comprises a magnetic tunnel junction (MTJ) storage element and a sense amplifier. The sense amplifier is coupled to a first path and to a second path. The first path includes a first current direction selecting transistor and the second path includes a second current direction selecting transistor. The first path is coupled to a bit line of the MTJ storage element and the second path is coupled to a source line of the MTJ storage element.