发明授权
- 专利标题: Semiconductor memory device
- 专利标题(中): 半导体存储器件
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申请号: US13045227申请日: 2011-03-10
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公开(公告)号: US08208333B2公开(公告)日: 2012-06-26
- 发明人: Mikihiko Itoh
- 申请人: Mikihiko Itoh
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2007-297024 20071115
- 主分类号: G11C7/04
- IPC分类号: G11C7/04
摘要:
A semiconductor memory device includes a memory cell array in which a plurality of memory cells are arranged in a matrix, a read unit which reads out data from the memory cells in the memory cell array, a write unit which writes data in the memory cells in the memory cell array, a read voltage generating unit which generates a read voltage and supplies the read voltage to the read unit, and a voltage control unit which controls the read voltage in accordance with temperatures.
公开/授权文献
- US20110157983A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日:2011-06-30
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