发明授权
- 专利标题： Semiconductor manufacturing method
- 专利标题（中）： 半导体制造方法
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申请号： US12615277申请日： 2009-11-10
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公开(公告)号： US08211781B2公开(公告)日： 2012-07-03
- 发明人: Tatsuma Saito , Shinichi Tanaka , Yusuke Yokobayashi
- 申请人： Tatsuma Saito , Shinichi Tanaka , Yusuke Yokobayashi
- 申请人地址： JP Tokyo
- 专利权人： Stanley Electric Co., Ltd.
- 当前专利权人： Stanley Electric Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Chen Yoshimura LLP
- 优先权： JP2008-287862 20081110; JP2008-287863 20081110
- 主分类号： H01L21/461
- IPC分类号： H01L21/461
摘要：
A manufacturing method for semiconductor devices having a metal support is provided. The method in one aspect includes growing a semiconductor film on a growth substrate; forming a metal support on a surface of said semiconductor film opposite to the growth substrate; thereafter removing said growth substrate from said semiconductor film; forming a street groove reaching said metal support in the said semiconductor film; radiating a first laser beam onto said metal support to form a first dividing groove having a substantially flat bottom in said metal support; and radiating a second laser beam onto said metal support to form a second dividing groove that penetrates through a portion of said metal support that remains where the first dividing groove is formed.
公开/授权文献
- US20100120228A1 SEMICONDUTOR MANUFACTURING METHOD 公开/授权日：2010-05-13
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