发明授权
US08212225B2 TEM grids for determination of structure-property relationships in nanotechnology
有权
用于确定纳米技术中结构 - 性质关系的TEM网格
- 专利标题: TEM grids for determination of structure-property relationships in nanotechnology
- 专利标题(中): 用于确定纳米技术中结构 - 性质关系的TEM网格
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申请号: US12600764申请日: 2008-05-19
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公开(公告)号: US08212225B2公开(公告)日: 2012-07-03
- 发明人: James E. Hutchison , Gregory J. Kearns
- 申请人: James E. Hutchison , Gregory J. Kearns
- 申请人地址: US OR Eugene
- 专利权人: State of Oregon acting by and through the State Board of Higher Education on behalf of the University of Oregon
- 当前专利权人: State of Oregon acting by and through the State Board of Higher Education on behalf of the University of Oregon
- 当前专利权人地址: US OR Eugene
- 代理机构: Klarquist Sparkman, LLP
- 国际申请: PCT/US2008/064152 WO 20080519
- 国际公布: WO2009/035727 WO 20090319
- 主分类号: H01J37/20
- IPC分类号: H01J37/20 ; B32B3/10 ; C23F1/00
摘要:
Silicon grids with electron-transparent SiO2 windows for use as substrates for high-resolution transmission electron microscopy of chemically-modified SiO2 surfaces are fabricated by forming an oxide layer on a silicon substrate. An aperture is defined in the silicon substrate by etching the substrate to the oxide layer. A single substrate can include a plurality of apertures that are in respective frame regions that are defined by one or more channels in the substrate. Structural or chemical functionalizations can be provided, and surface interactions observed via TEM.
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