发明授权
- 专利标题： Semiconductor power conversion apparatus
- 专利标题（中）： 半导体电力转换装置
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申请号： US12870309申请日： 2010-08-27
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公开(公告)号： US08213146B2公开(公告)日： 2012-07-03
- 发明人: Shuji Katoh , Toshihiko Matsuda , Takashi Ikimi , Hiroshi Nagata
- 申请人： Shuji Katoh , Toshihiko Matsuda , Takashi Ikimi , Hiroshi Nagata
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2006-261653 20060927
- 主分类号： H02H3/20
- IPC分类号： H02H3/20
摘要：
A semiconductor power conversion apparatus capable of protecting an IGBT from an overvoltage by supplying a sufficient gate current to the gate of the IGBT. The IGBT is protected from the overvoltage by connecting clamping elements connected in series between a collector of the IGBT and the gate thereof, and by connecting a resistor to each of different junction points between the clamping elements connected in series.
公开/授权文献
- US20100321847A1 SEMICONDUCTOR POWER CONVERSION APPARATUS 公开/授权日：2010-12-23
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