发明授权
- 专利标题： Magnetic tunnel junction with compensation element
- 专利标题（中）： 带有补偿元件的磁隧道结
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申请号： US13210436申请日： 2011-08-16
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公开(公告)号： US08213222B2公开(公告)日： 2012-07-03
- 发明人: Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Wei Tian , Xiaobin Wang , Xiaohua Lou
- 申请人： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Wei Tian , Xiaobin Wang , Xiaohua Lou
- 申请人地址： US CA Scotts Valley
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US CA Scotts Valley
- 代理机构： Mueting, Raasch & Gebhardt PA
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A magnetic tunnel junction having a compsensation element is disclosed. The magnetic tunnel junction includes a reference element, and a compensation element having an opposite magnetization moment to a magnetization moment of the reference element. A free magnetic layer is between the reference element and the compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic layer from the reference element. The free magnetic layer includes Co100-X-YFeXBY wherein X is a value being greater than 30 and Y is a value being greater than 15.
公开/授权文献
- US20110298068A1 MAGNETIC TUNNEL JUNCTION WITH COMPENSATION ELEMENT 公开/授权日：2011-12-08
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