发明授权
- 专利标题： Semiconductor memory device
- 专利标题（中）： 半导体存储器件
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申请号： US12641055申请日： 2009-12-17
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公开(公告)号： US08213245B2公开(公告)日： 2012-07-03
- 发明人: Kwang-Hyun Kim
- 申请人： Kwang-Hyun Kim
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor, Inc.
- 当前专利权人： Hynix Semiconductor, Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR2006-0134301 20061227
- 主分类号： G11C7/00
- IPC分类号： G11C7/00 ; G11C7/10 ; G11C8/00 ; G11C8/18
摘要：
A semiconductor memory device includes data transmission devices for transmit data in synchronization with each other. The semiconductor memory device includes a plurality of data transferring unit, a first control unit, a multiplexing unit, and a second control unit. The plurality of data transferring unit transfers data to a plurality of global lines. The first control unit controls the plurality of data transferring unit in response to a column select signal to select a column of a memory cell. The multiplexing unit multiplexes the data transferred to the plurality of global lines. The second control unit controls the multiplexing unit, wherein the second control unit synchronizes the column select signal with a column address signal having a column address information of the memory cell.
公开/授权文献
- US20100091580A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2010-04-15
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