Invention Grant
- Patent Title: Methods for E-beam direct write lithography
- Patent Title (中): 电子束直写光刻方法
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Application No.: US12617470Application Date: 2009-11-12
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Publication No.: US08214773B2Publication Date: 2012-07-03
- Inventor: Lee-Chung Lu , Yi-Kan Cheng , Ru-Gun Liu , Chih-Ming Lai
- Applicant: Lee-Chung Lu , Yi-Kan Cheng , Ru-Gun Liu , Chih-Ming Lai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method of forming integrated circuits for a wafer includes providing an E-Beam direct write (EBDW) system. A grid is generated for the wafer, wherein the grid includes grid lines. An integrated circuit is laid out for the wafer, wherein substantially no sensitive features in the integrated circuit cross the grid lines of the grid. An EBDW is performed on the wafer using the EBDW system.
Public/Granted literature
- US20100205577A1 Design Methods for E-Beam Direct Write Lithography Public/Granted day:2010-08-12
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