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US08216384B2 Combinatorial approach to the development of cleaning formulations for wet removal of high dose implant photoresist 有权
组合方法开发用于湿法去除高剂量植入物光刻胶的清洁配方

  • Patent Title: Combinatorial approach to the development of cleaning formulations for wet removal of high dose implant photoresist
  • Patent Title (中): 组合方法开发用于湿法去除高剂量植入物光刻胶的清洁配方
  • Application No.: US12614310
    Application Date: 2009-11-06
  • Publication No.: US08216384B2
    Publication Date: 2012-07-10
  • Inventor: Nitin Kumar , Guizhen Zhang
  • Applicant: Nitin Kumar , Guizhen Zhang
  • Applicant Address: US CA San Jose
  • Assignee: Intermolecular, Inc.
  • Current Assignee: Intermolecular, Inc.
  • Current Assignee Address: US CA San Jose
  • Main IPC: C23G1/02
  • IPC: C23G1/02
Combinatorial approach to the development of cleaning formulations for wet removal of high dose implant photoresist
Abstract:
Embodiments of the current invention describe a cleaning solution for the removal of high dose implanted photoresist, along with methods of applying the cleaning solution to remove the high dose implanted photoresist and combinatorially developing the cleaning solution.
Abstract(Chinese):

本发明的实施方案描述了用于去除高剂量植入光刻胶的清洁溶液，以及施加清洁溶液以除去高剂量植入光刻胶并组合显影清洁溶液的方法。

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