发明授权
- 专利标题: High precision current reference using offset PTAT correction
- 专利标题(中): 使用偏移PTAT校正的高精度电流参考
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申请号: US11975967申请日: 2007-10-22
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公开(公告)号: US08217713B1公开(公告)日: 2012-07-10
- 发明人: Vijay Kumar Srinivasa Raghavan , Cristinel Zonte
- 申请人: Vijay Kumar Srinivasa Raghavan , Cristinel Zonte
- 申请人地址: US CA San Jose
- 专利权人: Cypress Semiconductor Corporation
- 当前专利权人: Cypress Semiconductor Corporation
- 当前专利权人地址: US CA San Jose
- 主分类号: G05F1/10
- IPC分类号: G05F1/10
摘要:
A device for providing a high precision current reference comprising a PTAT generator circuit for supplying a voltage, a high precision current reference offset generator circuit for generating a high precision current offset to compensate for variation in a resistance component due to variation in temperature, and a current adding circuit for aggregating the current from the PTAT generator circuit and the current from the high precision current reference offset generator circuit. In one embodiment, a high precision current reference generated is substantially independent of temperature. On-chip resistors may be used to design a high precision current reference. Accordingly, high precision current reference generated maintains high precision with zero temperature co-efficient using on-chip resistors that are substantially cheaper than off-chip resistors.
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