发明授权
- 专利标题: Word-line level shift circuit
- 专利标题(中): 字线电平移位电路
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申请号: US12579089申请日: 2009-10-14
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公开(公告)号: US08218378B2公开(公告)日: 2012-07-10
- 发明人: Igor Arsovski , Matthew W. Deming , Darryl R. Hill , Harold Pilo , Reid A. Wistort
- 申请人: Igor Arsovski , Matthew W. Deming , Darryl R. Hill , Harold Pilo , Reid A. Wistort
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Hoffman Warnick LLC
- 代理商 David A. Cain
- 主分类号: G11C8/08
- IPC分类号: G11C8/08
摘要:
A dual word-line level shifter circuit and associated SRAM. A circuit is disclosed that includes a first transistor gated by a data input at the lower voltage, and a second transistor gated by a restore input at the higher voltage, wherein the first and second transistors are coupled along a series path to a source at the higher voltage; a control node along the series path; an output node coupled to the control node via a first pair of parallel transistors; and a feedback circuit having a second pair of parallel transistors and a feedback transistor, wherein the feedback transistor couples the second pair of parallel transistors to the control node and is gated by the output node.
公开/授权文献
- US20110085390A1 WORD-LINE LEVEL SHIFT CIRCUIT 公开/授权日:2011-04-14
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