Invention Grant
- Patent Title: Method of thermal density optimization for device and process enhancement
- Patent Title (中): 设备和过程增强的热密度优化方法
-
Application No.: US12713902Application Date: 2010-02-26
-
Publication No.: US08219951B2Publication Date: 2012-07-10
- Inventor: Ying-Chou Cheng , Tsong-Hua Ou , Chih-Wei Hsu , Cheng-Lung Tsai , Ru-Gun Liu , Wen-Chun Huang , Boren Luo
- Applicant: Ying-Chou Cheng , Tsong-Hua Ou , Chih-Wei Hsu , Cheng-Lung Tsai , Ru-Gun Liu , Wen-Chun Huang , Boren Luo
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufactuing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufactuing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50
Abstract:
The present disclosure provides an integrated circuit method. The method includes providing an integrated circuit (IC) design layout; simulating thermal effect to the IC design layout; simulating electrical performance to the IC design layout based on the simulating thermal effect; and performing thermal dummy insertion to the IC design layout based on the simulating electrical performance.
Public/Granted literature
- US20110214101A1 METHOD OF THERMAL DENSITY OPTIMIZATION FOR DEVICE AND PROCESS ENHANCEMENT Public/Granted day:2011-09-01
Information query
