Invention Grant
US08222055B2 Silicon nitride layer for light emitting device, light emitting device using the same, and method of forming silicon nitride layer for light emitting device
有权
用于发光器件的氮化硅层，使用该氮化硅的发光器件的发光器件以及用于形成发光器件的氮化硅层的方法
- Patent Title: Silicon nitride layer for light emitting device, light emitting device using the same, and method of forming silicon nitride layer for light emitting device
- Patent Title (中): 用于发光器件的氮化硅层，使用该氮化硅的发光器件的发光器件以及用于形成发光器件的氮化硅层的方法
-
Application No.: US12613869Application Date: 2009-11-06
-
Publication No.: US08222055B2Publication Date: 2012-07-17
- Inventor: Tae Youb Kim , Nae Man Park , Kyung Hyun Kim , Gun Yong Sung
- Applicant: Tae Youb Kim , Nae Man Park , Kyung Hyun Kim , Gun Yong Sung
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Ladas & Parry LLP
- Priority: KR10-2004-0089475 20041104
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Provided are a silicon nitride layer for a light emitting device, light emitting device using the same, and method of forming the silicon nitride layer for the light emitting device. The silicon nitride layer of the light emitting device includes a silicon nitride matrix and silicon nanocrystals formed in the silicon nitride matrix. A light emitting device manufactured by the silicon nitride layer has a good luminous efficiency and emits light in the visible region including the short-wavelength blue/violet region and the near infrared region.
Public/Granted literature
Information query
IPC分类:
