发明授权
US08222055B2 Silicon nitride layer for light emitting device, light emitting device using the same, and method of forming silicon nitride layer for light emitting device
有权
用于发光器件的氮化硅层，使用该氮化硅的发光器件的发光器件以及用于形成发光器件的氮化硅层的方法
- 专利标题： Silicon nitride layer for light emitting device, light emitting device using the same, and method of forming silicon nitride layer for light emitting device
- 专利标题（中）： 用于发光器件的氮化硅层，使用该氮化硅的发光器件的发光器件以及用于形成发光器件的氮化硅层的方法
-
申请号： US12613869申请日： 2009-11-06
-
公开(公告)号： US08222055B2公开(公告)日： 2012-07-17
- 发明人: Tae Youb Kim , Nae Man Park , Kyung Hyun Kim , Gun Yong Sung
- 申请人： Tae Youb Kim , Nae Man Park , Kyung Hyun Kim , Gun Yong Sung
- 申请人地址： KR Daejeon
- 专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人地址： KR Daejeon
- 代理机构： Ladas & Parry LLP
- 优先权： KR10-2004-0089475 20041104
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Provided are a silicon nitride layer for a light emitting device, light emitting device using the same, and method of forming the silicon nitride layer for the light emitting device. The silicon nitride layer of the light emitting device includes a silicon nitride matrix and silicon nanocrystals formed in the silicon nitride matrix. A light emitting device manufactured by the silicon nitride layer has a good luminous efficiency and emits light in the visible region including the short-wavelength blue/violet region and the near infrared region.
公开/授权文献
信息查询
IPC分类:
