Invention Grant
- Patent Title: Methods of fabricating devices by low pressure cold welding
- Patent Title (中): 低压冷焊制造装置的方法
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Application No.: US10387925Application Date: 2003-03-13
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Publication No.: US08222072B2Publication Date: 2012-07-17
- Inventor: Changsoon Kim , Stephen R. Forrest
- Applicant: Changsoon Kim , Stephen R. Forrest
- Applicant Address: US NJ Princeton
- Assignee: The Trustees of Princeton University
- Current Assignee: The Trustees of Princeton University
- Current Assignee Address: US NJ Princeton
- Agency: Kenyon & Kenyon LLP
- Main IPC: H01L51/40
- IPC: H01L51/40
Abstract:
Methods of transferring a metal and/or organic layer from a patterned stamp, preferably a soft, elastomeric stamp, to a substrate are provided. The patterned metal or organic layer may be used for example, in a wide range of electronic devices. The present methods are particularly suitable for nanoscale patterning of organic electronic components.
Public/Granted literature
- US20040121568A1 Methods of fabricating devices by low pressure cold welding Public/Granted day:2004-06-24
Information query
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