Invention Grant
- Patent Title: Methods for forming barrier regions within regions of insulating material resulting in outgassing paths from the insulating material and related devices
- Patent Title (中): 在绝缘材料的区域内形成阻挡区域的方法，导致从绝缘材料和相关装置的脱气路径
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Application No.: US12707150Application Date: 2010-02-17
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Publication No.: US08222093B2Publication Date: 2012-07-17
- Inventor: Man Fai Ng , Bin Yang
- Applicant: Man Fai Ng , Bin Yang
- Applicant Address: KY Grand Cayman
- Assignee: Globalfoundries, Inc.
- Current Assignee: Globalfoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/8238 ; H01L21/336 ; H01L21/76
Abstract:
Methods and devices are provided for fabricating a semiconductor device having barrier regions within regions of insulating material resulting in outgassing paths from the regions of insulating material. A method comprises forming a barrier region within an insulating material proximate the isolated region of semiconductor material and forming a gate structure overlying the isolated region of semiconductor material. The barrier region is adjacent to the isolated region of semiconductor material, resulting in an outgassing path within the insulating material.
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