发明授权
US08222110B2 Method for fabricating semiconductor device with vertical transistor having a second active pillar formed over a first active pillar
有权
用于制造具有垂直晶体管的半导体器件的方法，所述垂直晶体管具有形成在第一有源支柱上的
- 专利标题： Method for fabricating semiconductor device with vertical transistor having a second active pillar formed over a first active pillar
- 专利标题（中）： 用于制造具有垂直晶体管的半导体器件的方法，所述垂直晶体管具有形成在第一有源支柱上的
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申请号： US12827234申请日： 2010-06-30
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公开(公告)号： US08222110B2公开(公告)日： 2012-07-17
- 发明人: Eun-Jeong Kim , Sang-Tae Ahn
- 申请人： Eun-Jeong Kim , Sang-Tae Ahn
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2009-0060878 20090703
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method for fabricating a semiconductor device includes forming a plurality of first active pillars by etching a substrate using a hard mask layer as an etching barrier, forming a gate conductive layer surrounding sidewalls of the first active pillars and the hard mask layer, forming a word line conductive layer filling gaps defined by the gate conductive layer, forming word lines and vertical gates by simultaneously removing portions of the word line conductive layer and the gate conductive layer on the sidewalls of the hard mask layer, forming an inter-layer dielectric layer filling gaps formed by removing the word line conductive layer and the gate conductive layer, exposing surfaces of the first active pillars by removing the hard mask layer, and growing second active pillars over the first active pillars.
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