Invention Grant
US08222680B2 Double and triple gate MOSFET devices and methods for making same
有权
双栅极和三栅极MOSFET器件及其制造方法
- Patent Title: Double and triple gate MOSFET devices and methods for making same
- Patent Title (中): 双栅极和三栅极MOSFET器件及其制造方法
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Application No.: US10274961Application Date: 2002-10-22
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Publication No.: US08222680B2Publication Date: 2012-07-17
- Inventor: Ming-Ren Lin , Judy Xilin An , Zoran Krivokapic , Cyrus E. Tabery , Haihong Wang , Bin Yu
- Applicant: Ming-Ren Lin , Judy Xilin An , Zoran Krivokapic , Cyrus E. Tabery , Haihong Wang , Bin Yu
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Harrity & Harrity, LLP
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
A double gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin, a first gate and a second gate. The first gate is formed on top of the fin. The second gate surrounds the fin and the first gate. In another implementation, a triple gate MOSFET includes a fin, a first gate, a second gate, and a third gate. The first gate is formed on top of the fin. The second gate is formed adjacent the fin. The third gate is formed adjacent the fin and opposite the second gate.
Public/Granted literature
- US20040075122A1 Double and triple gate MOSFET devices and methods for making same Public/Granted day:2004-04-22
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