Invention Grant
- Patent Title: SONOS stack with split nitride memory layer
- Patent Title (中): SONOS堆叠带有划痕的氮化物存储层
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Application No.: US12767105Application Date: 2010-04-26
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Publication No.: US08222688B1Publication Date: 2012-07-17
- Inventor: Fredrick Jenne , Krishnaswamy Ramkumar
- Applicant: Fredrick Jenne , Krishnaswamy Ramkumar
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
A semiconductor device includes a substrate, a first oxide layer formed on the substrate, an oxygen-rich nitride layer formed on the first oxide layer, a second oxide layer formed on the oxygen-rich nitride layer, and an oxygen-poor nitride layer formed on the second oxide layer.
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