Invention Grant
US08223329B2 Endpoint detection device for realizing real-time control of plasma reactor, plasma reactor with endpoint detection device, and endpoint detection method
有权
端点检测装置,用于实现等离子体反应器的实时控制,具有端点检测装置的等离子体反应器和端点检测方法
- Patent Title: Endpoint detection device for realizing real-time control of plasma reactor, plasma reactor with endpoint detection device, and endpoint detection method
- Patent Title (中): 端点检测装置,用于实现等离子体反应器的实时控制,具有端点检测装置的等离子体反应器和端点检测方法
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Application No.: US13279936Application Date: 2011-10-24
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Publication No.: US08223329B2Publication Date: 2012-07-17
- Inventor: Kun Joo Park , Kwang Hoon Han , Kee Hyun Kim , Weon Mook Lee , Kyounghoon Han , Heeyeop Chae
- Applicant: Kun Joo Park , Kwang Hoon Han , Kee Hyun Kim , Weon Mook Lee , Kyounghoon Han , Heeyeop Chae
- Applicant Address: KR Suwon
- Assignee: DMS Co. Ltd
- Current Assignee: DMS Co. Ltd
- Current Assignee Address: KR Suwon
- Agency: Volpe And Koenig, P.C.
- Priority: KR10-2007-0073864 20070724
- Main IPC: G01J3/00
- IPC: G01J3/00

Abstract:
An endpoint detection device, a plasma reactor with the endpoint detection device, and an endpoint detection method are provided. The endpoint detection device includes an OES data operation unit, a data selector, a product generator, an SVM, and an endpoint determiner. The OES data operation unit processes reference OES data by normalization and PCA. The data selector selects part of the linear reference loading vectors and selects part of the selected linear reference loading vectors. The product generator outputs at least one reference product value. The SVM performs regression and outputs a prediction product value. The endpoint determiner detects a process wafer etch or deposition endpoint and outputs a detection signal.
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