发明授权
US08223573B2 Method and device for controlling a memory access and correspondingly configured semiconductor memory
有权
用于控制存储器存取和相应配置的半导体存储器的方法和装置
- 专利标题: Method and device for controlling a memory access and correspondingly configured semiconductor memory
- 专利标题(中): 用于控制存储器存取和相应配置的半导体存储器的方法和装置
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申请号: US12393386申请日: 2009-02-26
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公开(公告)号: US08223573B2公开(公告)日: 2012-07-17
- 发明人: Siegmar Koeppe , Martin Ostermayr
- 申请人: Siegmar Koeppe , Martin Ostermayr
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Lee & Hayes, PLLC
- 主分类号: G11C7/14
- IPC分类号: G11C7/14
摘要:
Method and device for controlling a memory access and correspondingly configured semiconductor memoryA method and a device for controlling a memory access of a memory comprising memory cells are described. A completion of the memory access is determined by means of at least one dummy bit line. The at least one dummy bit line is connected to a plurality of memory cells of the memory cells of the memory such that a content of the at least one memory cell can be read out via the at least one dummy bit line. The at least one memory cell can be set to a predetermined potential. Each of said plurality of memory cells is connected to the at least one dummy bit line and to at least one dummy word line such that each of said plurality of memory cells can be set to the predetermined potential by means of the at least one dummy bit line and by means of the at least one dummy word line.
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