发明授权
US08225042B1 Method and apparatus for preventing foreground erase operations in electrically writable memory devices
有权
用于防止电可写存储器件中的前景擦除操作的方法和装置
- 专利标题： Method and apparatus for preventing foreground erase operations in electrically writable memory devices
- 专利标题（中）： 用于防止电可写存储器件中的前景擦除操作的方法和装置
-
申请号： US12435986申请日： 2009-05-05
-
公开(公告)号： US08225042B1公开(公告)日： 2012-07-17
- 发明人: John Rudelic , Lance Dover
- 申请人： John Rudelic , Lance Dover
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Berkeley Law & Technology Group, LLP
- 主分类号： G06F13/14
- IPC分类号： G06F13/14
摘要：
Methods and systems are provided that may include a nonvolatile memory to store information, where the nonvolatile memory has a memory cache to store data corresponding to a received sector write operation, and a main memory comprising at least the designated memory block and a second memory block. A controller may reclaim at least one sector of the designated memory block and performing a write operation to write information from the memory cache in response to the received sector write operation to at least one sector of the second memory block.
信息查询
