Methods and apparatus for providing constant emissivity of the backside of susceptors are provided. Provided is a susceptor comprising: a susceptor plate having a surface for supporting a wafer and a backside surface opposite the wafer supporting surface; a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof located on the backside surface of the susceptor plate, the layer being stable in the presence of a reactive process gas. The layer comprises, for example, silicon dioxide, silicon nitride, silicon oxynitride, or combinations thereof. Also provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; locating the wafer on a support surface of the susceptor plate. The method can further comprises selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method further comprises selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.