发明授权
US08227028B2 Method for forming amorphous silica-based coating film with low dielectric constant and thus obtained amorphous silica-based coating film
有权
用于形成具有低介电常数的无定形二氧化硅基涂膜的方法,由此获得无定形二氧化硅基涂膜
- 专利标题: Method for forming amorphous silica-based coating film with low dielectric constant and thus obtained amorphous silica-based coating film
- 专利标题(中): 用于形成具有低介电常数的无定形二氧化硅基涂膜的方法,由此获得无定形二氧化硅基涂膜
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申请号: US12310486申请日: 2007-07-11
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公开(公告)号: US08227028B2公开(公告)日: 2012-07-24
- 发明人: Miki Egami , Akira Nakashima , Michio Komatsu
- 申请人: Miki Egami , Akira Nakashima , Michio Komatsu
- 申请人地址: JP Kawasaki-shi, Kanagawa
- 专利权人: JGC Catalysts and Chemicals Ltd.
- 当前专利权人: JGC Catalysts and Chemicals Ltd.
- 当前专利权人地址: JP Kawasaki-shi, Kanagawa
- 代理机构: Leydig, Voit & Mayer, Ltd.
- 优先权: JP2006-231202 20060828
- 国际申请: PCT/JP2007/063788 WO 20070711
- 国际公布: WO2008/026387 WO 20080306
- 主分类号: B05D3/02
- IPC分类号: B05D3/02 ; B05D3/04 ; H01L29/00
摘要:
A method of forming on a substrate an amorphous silica-based coating film having a low dielectric constant of 3.0 or below and a film strength (Young's modulus) of 3.0 GPa or more, which comprises, as a typical one, the steps of; (a) coating on the substrate a liquid composition containing hydrolysate of an organic silicon compound or compounds hydrolyzed in the presence of tetraalkylammonium hydroxide (TAAOH); (b) setting the substrate in a chamber and then drying a coating film formed on the substrate at a temperature in the range from 25 to 340° C.; (c) heating the coating film at a temperature in the range from 105 to 450° C. with introduction of a superheated steam having such a temperature into the chamber, and (d) curing the coating film at a temperature in the range from 350 to 450° C. with introduction of a nitrogen gas into the chamber.
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