发明授权
US08227069B2 Process for producing graphene/SiC composite material and graphene/SiC composite material obtained thereby
有权
由此获得石墨烯/ SiC复合材料和石墨烯/ SiC复合材料的方法
- 专利标题： Process for producing graphene/SiC composite material and graphene/SiC composite material obtained thereby
- 专利标题（中）： 由此获得石墨烯/ SiC复合材料和石墨烯/ SiC复合材料的方法
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申请号： US13032884申请日： 2011-02-23
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公开(公告)号： US08227069B2公开(公告)日： 2012-07-24
- 发明人: Michiko Kusunoki , Wataru Norimatsu
- 申请人： Michiko Kusunoki , Wataru Norimatsu
- 申请人地址： JP Nagoya-Shi
- 专利权人： National University Corporation Nagoya University
- 当前专利权人： National University Corporation Nagoya University
- 当前专利权人地址： JP Nagoya-Shi
- 代理机构： Burr & Brown
- 优先权： JP2008-220179 20080828
- 主分类号： B32B3/00
- IPC分类号： B32B3/00 ; B32B5/00
摘要：
A graphene/SiC composite material is provided in which a large-area graphene layer that is flat at an atomic level is formed on an SiC single crystal substrate. The process for producing the graphene/SiC composite material includes the steps of removing an oxide film that is formed by natural oxidation and covers a surface of the SiC single crystal substrate, thereby exposing an Si surface of the SiC single crystal substrate, heating the SiC single crystal substrate with the Si surface exposed under an oxygen atmosphere, thereby forming an SiO2 layer on the surface of the SiC single crystal substrate, and heating the SiC single crystal substrate under vacuum on which the SiO2 layer was formed.
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