发明授权
US08227348B2 Method for patterning nanowires on substrate using novel sacrificial layer material
有权
使用新型牺牲层材料在衬底上构图纳米线的方法
- 专利标题： Method for patterning nanowires on substrate using novel sacrificial layer material
- 专利标题（中）： 使用新型牺牲层材料在衬底上构图纳米线的方法
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申请号： US12349164申请日： 2009-01-06
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公开(公告)号： US08227348B2公开(公告)日： 2012-07-24
- 发明人: Jae Min Myoung , Jyoti Prakash Kar
- 申请人： Jae Min Myoung , Jyoti Prakash Kar
- 申请人地址： KR Seoul
- 专利权人： Industry-Academic Corporation Foundation, Yonsei University
- 当前专利权人： Industry-Academic Corporation Foundation, Yonsei University
- 当前专利权人地址： KR Seoul
- 代理机构： Rosenberg, Klein & Lee
- 优先权： KR10-2008-112055 20081112
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
A method for patterning nanowires on a substrate. The method includes procedures of preparing a substrate having a patterned sacrificial layer of barium fluoride thereon; growing nanowires on an entire surface of the resultant substrate including the patterned sacrificial layer; and removing the patterned sacrificial layer using a solvent to remove part of the nanowires on the patterned sacrificial layer such that part of the nanowires in direct contact with the substrate remains on the substrate to thereby form a nanowire pattern.
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