发明授权
US08227806B2 Active matrix display in which LDD regions in the driver circuit and the storage capacitor in the pixel section have the same dopant concentration
有权
驱动电路中的LDD区域和像素区域中的存储电容器的有源矩阵显示具有相同的掺杂剂浓度
- 专利标题： Active matrix display in which LDD regions in the driver circuit and the storage capacitor in the pixel section have the same dopant concentration
- 专利标题（中）： 驱动电路中的LDD区域和像素区域中的存储电容器的有源矩阵显示具有相同的掺杂剂浓度
-
申请号： US11787749申请日： 2007-04-17
-
公开(公告)号： US08227806B2公开(公告)日： 2012-07-24
- 发明人: Shunpei Yamazaki , Yasuyuki Arai , Jun Koyama
- 申请人： Shunpei Yamazaki , Yasuyuki Arai , Jun Koyama
- 申请人地址： JP
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Husch Blackwell LLP
- 优先权： JP11-191097 19990706
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L29/786
摘要：
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, a GOLD structure or an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel portion is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an interlayer insulating film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.
公开/授权文献
- US20070205413A1 Semiconductor device and manufacturing method thereof 公开/授权日：2007-09-06
信息查询
IPC分类:
