发明授权
- 专利标题： Thin p-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes
- 专利标题（中）： 薄型p型氮化镓和氮化镓氮化镓电子阻挡层无氮化镓基发光二极管
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申请号： US13250558申请日： 2011-09-30
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公开(公告)号： US08227819B2公开(公告)日： 2012-07-24
- 发明人: Hong Zhong , Anurag Tyagi , James Stephen Speck , Steven P. Denbaars , Shuji Nakamura
- 申请人： Hong Zhong , Anurag Tyagi , James Stephen Speck , Steven P. Denbaars , Shuji Nakamura
- 申请人地址： US CA Oakland
- 专利权人： The Regents of the University of California
- 当前专利权人： The Regents of the University of California
- 当前专利权人地址： US CA Oakland
- 代理机构： Gates & Cooper LLP
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer.
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