Invention Grant
US08227849B2 Method and structure for creation of a metal insulator metal capacitor
有权
制造金属绝缘子金属电容器的方法和结构
- Patent Title: Method and structure for creation of a metal insulator metal capacitor
- Patent Title (中): 制造金属绝缘子金属电容器的方法和结构
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Application No.: US12706834Application Date: 2010-02-17
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Publication No.: US08227849B2Publication Date: 2012-07-24
- Inventor: Ebenezer E Eshun , Ronald J Bolam , Douglas D Coolbaugh , Keith E Downes , Natalie B Feilchenfeld , Zhong-Xiang He
- Applicant: Ebenezer E Eshun , Ronald J Bolam , Douglas D Coolbaugh , Keith E Downes , Natalie B Feilchenfeld , Zhong-Xiang He
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Katherine S. Brown
- Main IPC: H01L29/92
- IPC: H01L29/92
Abstract:
The invention is directed to an improved capacitor that reduces edge defects and prevents yield failures. A first embodiment of the invention comprises a protective layer adjacent an interface of a conductive layer with the insulator, while the second embodiment of the invention comprises a protective layer on an insulator which is on a conductive layer.
Public/Granted literature
- US20100149723A1 METHOD AND STRUCTURE FOR CREATION OF A METAL INSULATOR METAL CAPACITOR Public/Granted day:2010-06-17
Information query
IPC分类:
