Invention Grant
- Patent Title: Photo-stimulated low electron temperature high current diamond film field emission cathode
- Patent Title (中): 光刺激的低电子温度高电流金刚石膜场发射阴极
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Application No.: US13204008Application Date: 2011-08-05
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Publication No.: US08227985B2Publication Date: 2012-07-24
- Inventor: Roger Philips Shurter , David James Devlin , Nathan Andrew Moody , Jose Martin Taccetti , Steven John Russell
- Applicant: Roger Philips Shurter , David James Devlin , Nathan Andrew Moody , Jose Martin Taccetti , Steven John Russell
- Applicant Address: US NM Los Alamos
- Assignee: Los Alamos National Security, LLC
- Current Assignee: Los Alamos National Security, LLC
- Current Assignee Address: US NM Los Alamos
- Agent Juliet A. Jones; Samuel L. Borkowsky
- Main IPC: H01J9/02
- IPC: H01J9/02 ; H01J21/00 ; H01J5/16 ; H01J1/34
Abstract:
An electron source includes a back contact surface having a means for attaching a power source to the back contact surface. The electron source also includes a layer comprising platinum in direct contact with the back contact surface, a composite layer of single-walled carbon nanotubes embedded in platinum in direct contact with the layer comprising platinum. The electron source also includes a nanocrystalline diamond layer in direct contact with the composite layer. The nanocrystalline diamond layer is doped with boron. A portion of the back contact surface is removed to reveal the underlying platinum. The electron source is contained in an evacuable container.
Public/Granted literature
- US20120032576A1 PHOTO-STIMULATED LOW ELECTRON TEMPERATURE HIGH CURRENT DIAMOND FILM FIELD EMISSION CATHODE Public/Granted day:2012-02-09
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