发明授权
US08228711B2 Bi-directional resistive memory devices and related memory systems and methods of writing data
有权
双向电阻式存储器件和相关的存储器系统以及写入数据的方法
- 专利标题: Bi-directional resistive memory devices and related memory systems and methods of writing data
- 专利标题(中): 双向电阻式存储器件和相关的存储器系统以及写入数据的方法
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申请号: US12715742申请日: 2010-03-02
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公开(公告)号: US08228711B2公开(公告)日: 2012-07-24
- 发明人: Ho-Jung Kim , Chul-Woo Park , Sang-Beom Kang , Hyun-Ho Choi
- 申请人: Ho-Jung Kim , Chul-Woo Park , Sang-Beom Kang , Hyun-Ho Choi
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec
- 优先权: KR10-2009-0017686 20090302
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
A bi-directional resistive memory device includes a memory cell array including a plurality of memory cells and an input/output (I/O) circuit. The I/O circuit is configured to generate a first voltage having a positive polarity and a second voltage having a negative polarity, provide one of the first voltage and the second voltage to the memory cell array through a bitline responsive to a logic state of input data, and adjust magnitudes of the first and second voltage when data written in the memory cell array has an offset. Related memory systems and methods are also provided.