发明授权
- 专利标题： Method for controlling non-volatile semiconductor memory system
- 专利标题（中）： 用于控制非易失性半导体存储器系统的方法
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申请号： US11931101申请日： 2007-10-31
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公开(公告)号： US08230156B2公开(公告)日： 2012-07-24
- 发明人: Yoshiyuki Tanaka , Makoto Yatabe , Takeaki Sato , Kazuya Kawamoto
- 申请人： Yoshiyuki Tanaka , Makoto Yatabe , Takeaki Sato , Kazuya Kawamoto
- 申请人地址： JP Kawasaki-shi
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Kawasaki-shi
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP1997-214561 19970808; JP1998-119099 19980428
- 主分类号： G06F12/02
- IPC分类号： G06F12/02
摘要：
In a memory system using a storage medium, which is inserted into an electronic apparatus via a connector to add a memory function thereto, the storage medium has a GROUND terminal, a power supply terminal a control terminal and a data input/output terminal, and the connector has a function of being sequentially connected to each of the terminals. When the storage medium is inserted into the connector, the GROUND terminal and control terminal of the storage medium are connected to corresponding terminals of the connector before the power supply terminal and data input/output terminal of the storage medium are connected to corresponding terminals of the connector. Thus, it is possible to improve the stability when a memory card is inserted into or ejected from the memory system.
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